BAT18212
35 V, SILICON, PIN DIODE

From NXP

StatusACTIVE
ApplicationSWITCHING
Breakdown Voltage-Min35 V
ConfigurationSINGLE
Diode Capacitance-Max1 pF
Diode Element MaterialSILICON
Diode Forward Resistance-Max0.7000 ohm
Diode TypePIN DIODE
Number of Elements1
Number of Terminals3
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
TechnologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal FormGULL WING
Terminal PositionDUAL

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