BSP220TRL
225 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

From NXP

StatusACTIVE
Case ConnectionDRAIN
Channel TypeP-CHANNEL
China RoHS CompliantYes
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)0.2250 A
Drain-source On Resistance-Max12 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)15 pF
Lead FreeYes
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FinishTIN
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

External links