IRF640,127
MOSFET N-CH 200V 16A TO220AB

From NXP Semiconductors

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C16A (Tc)
DatasheetsIRF640, IRF640S
Drain to Source Voltage (Vdss)200V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs63nC @ 10V
Input Capacitance (Ciss) @ Vds1850pF @ 25V
Mounting TypeThrough Hole
Other Names568-1161-5 934055545127
Package / CaseTO-220-3
PackagingTube
Power - Max136W
Product PhotosTO-220-3, TO-220AB
Rds On (Max) @ Id, Vgs180 mOhm @ 8A, 10V
SeriesTrenchMOS™
Standard Package50
Supplier Device PackageTO-220AB
Vgs(th) (Max) @ Id4V @ 1mA

External links