MMRF1005HR5
Trans RF FET N-CH 120V 3-Pin NI-780 T/R

From NXP SEMICONDUCTORS

Channel ModeEnhancement
Channel TypeN
Drain Efficiency (Typ)57(%)
Drain Source Voltage (Max)120(V)
Frequency (Max)1300(MHz)
Input Capacitance (Typ)@Vds340@50V(pF)
Mode Of OperationCW/Pulsed RF
MountingScrew
Number of Elements1
Operating Temp Range-65C to 150C
Output Capacitance (Typ)@Vds58@50V(pF)
Output Power (Max)250(TYP)
Package TypeNI-780
PackagingTape and Reel
Pin Count3
Power Gain (Typ)@Vds20/22.7(dB)
Rad HardenedNo
Reverse Capacitance (Typ)1.2@50V(pF)
Screening LevelMilitary

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