MRF6V2150NBR1
Trans RF FET N-CH 110V 5-Pin TO-272 W T/R

From NXP SEMICONDUCTORS

Channel ModeEnhancement
Channel TypeN
Drain Efficiency (Typ)78.7(%)
Drain Source Voltage (Max)110(V)
Frequency (Max)450(MHz)
Frequency (Min)10(MHz)
Input Capacitance (Typ)@Vds163@50V(pF)
Mode Of OperationCW
MountingScrew
Number of Elements1
Operating Temp Range-65C to 225C
Output Capacitance (Typ)@Vds93@50V(pF)
Output Power (Max)150(TYP)
Package TypeTO-272 W
PackagingTape and Reel
Pin Count5
Power Gain (Typ)@Vds32.3(dB)
Rad HardenedNo
Reverse Capacitance (Typ)1.6@50V(pF)
Screening LevelMilitary

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