MRF8S21100HSR3 Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
From NXP SEMICONDUCTORS
| Channel Mode | Enhancement |
| Channel Type | N |
| Drain Efficiency (Typ) | 33.4(%) |
| Drain Source Voltage (Max) | 65(V) |
| Frequency (Max) | 2170(MHz) |
| Frequency (Min) | 2110(MHz) |
| Mode Of Operation | 1-Carrier W-CDMA |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -65C to 225C |
| Output Power (Max) | 24 |
| Package Type | NI-780S |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Power Gain (Typ)@Vds | 18.3(dB) |
| Rad Hardened | No |
| Screening Level | Military |
