PBSS4160DSH Bipolar Transistors - BJT 1A NPN/NPN Low VCEsat Transistor
From NXP Semiconductors
Brand | NXP Semiconductors |
Collector- Base Voltage VCBO | 80 V |
Collector- Emitter Voltage VCEO Max | 60 V |
Collector-Emitter Saturation Voltage | 200 mV |
Configuration | Dual |
DC Collector/Base Gain hfe Min | 250 at 1 mA, 5 V |
DC Current Gain hFE Max | 500 at 1 mA, 5 V |
Emitter- Base Voltage VEBO | 5 V |
Gain Bandwidth Product fT | 220 MHz |
Manufacturer | NXP |
Maximum DC Collector Current | 2 A |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 65 C |
Mounting Style | SMD/SMT |
Package / Case | TSOP-6 |
Packaging | Reel |
Pd - Power Dissipation | 700 mW |
Product Category | Bipolar Transistors - BJT |
RoHS | Details |
Technology | Si |
Transistor Polarity | NPN, NPN |