PBSS4160DSH
Bipolar Transistors - BJT 1A NPN/NPN Low VCEsat Transistor

From NXP Semiconductors

BrandNXP Semiconductors
Collector- Base Voltage VCBO80 V
Collector- Emitter Voltage VCEO Max60 V
Collector-Emitter Saturation Voltage200 mV
ConfigurationDual
DC Collector/Base Gain hfe Min250 at 1 mA, 5 V
DC Current Gain hFE Max500 at 1 mA, 5 V
Emitter- Base Voltage VEBO5 V
Gain Bandwidth Product fT220 MHz
ManufacturerNXP
Maximum DC Collector Current2 A
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
Mounting StyleSMD/SMT
Package / CaseTSOP-6
PackagingReel
Pd - Power Dissipation700 mW
Product CategoryBipolar Transistors - BJT
RoHSDetails
TechnologySi
Transistor PolarityNPN, NPN

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