PDTA115ES,126 TRANS PREBIAS PNP 500MW TO92-3
From NXP Semiconductors
| Category | Discrete Semiconductor Products |
| Current - Collector (Ic) (Max) | 20mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Datasheets | PDTA115E |
| Family | Transistors (BJT) - Single, Pre-Biased |
| Frequency - Transition | - |
| Mounting Type | Through Hole |
| Other Names | 934058152126 PDTA115ES AMO PDTA115ES AMO-ND |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Packaging | Tape & Box (TB) |
| Power - Max | 500mW |
| Product Photos | TO-92-3(StandardBody),TO-226_straightlead |
| Resistor - Base (R1) (Ohms) | 100k |
| Resistor - Emitter Base (R2) (Ohms) | 100k |
| Series | - |
| Standard Package | 2,000 |
| Supplier Device Package | TO-92-3 |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
