PDTB123TT,215
TRANS PREBIAS PNP 250MW TO236AB

From NXP Semiconductors

CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)500mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA, 5V
DatasheetsPDTB123T Series
FamilyTransistors (BJT) - Single, Pre-Biased
Frequency - Transition-
Mounting TypeSurface Mount
Other Names934059729215 PDTB123TT T/R PDTB123TT T/R-ND
Package / CaseTO-236-3, SC-59, SOT-23-3
PackagingTape & Reel (TR)
Power - Max250mW
Product PhotosSOT-23-3
Resistor - Base (R1) (Ohms)2.2k
Resistor - Emitter Base (R2) (Ohms)-
Series-
Standard Package3,000
Supplier Device PackageSOT-23 (TO-236AB)
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)50V

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