PDTC114ET,215
TRANS PREBIAS NPN 250MW TO236AB

From NXP Semiconductors

CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
DatasheetsPDTC114E Series
FamilyTransistors (BJT) - Single, Pre-Biased
Frequency - Transition-
Mounting TypeSurface Mount
Online CatalogNPN Pre-biased Transistors
Other Names568-6429-2 934031010215 PDTC114ET T/R PDTC114ET T/R-ND PDTC114ET,215-ND PDTC114ET215
PCN Design/SpecificationResin Hardener 02/Jul/2013
PCN PackagingLighter Reels 02/Jan/2014
Package / CaseTO-236-3, SC-59, SOT-23-3
PackagingTape & Reel (TR)
Power - Max250mW
Product PhotosSOT-23-3
Resistor - Base (R1) (Ohms)10k
Resistor - Emitter Base (R2) (Ohms)10k
Series-
Standard Package3,000
Supplier Device PackageSOT-23 (TO-236AB)
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max)50V

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