PMBT2907AYSX Bipolar Transistors - BJT 60V Double PNP Switching Transistor
From NXP Semiconductors
Brand | NXP Semiconductors |
Collector- Base Voltage VCBO | - 60 V |
Collector- Emitter Voltage VCEO Max | - 60 V |
Collector-Emitter Saturation Voltage | - 1.6 V |
Configuration | Dual |
DC Collector/Base Gain hfe Min | 100 at - 150 mA, - 10 V |
DC Current Gain hFE Max | 300 at - 150 mA, - 10 V |
Emitter- Base Voltage VEBO | - 5 V |
Gain Bandwidth Product fT | 200 MHz |
Manufacturer | NXP |
Maximum DC Collector Current | - 800 mA |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Mounting Style | SMD/SMT |
Package / Case | TSOP-6 |
Packaging | Reel |
Pd - Power Dissipation | 550 mW |
Product Category | Bipolar Transistors - BJT |
RoHS | Details |
Technology | Si |
Transistor Polarity | PNP, PNP |