2N6667BG
10 A, 60 V, PNP, Si, POWER TRANSISTOR

From ON Semiconductor L.L.C.

StatusACTIVE
Case ConnectionCOLLECTOR
Collector Current-Max (IC)10 A
Collector-emitter Voltage-Max60 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE)100
Mfr Package DescriptionTO-220AB, 3 PIN
Number of Elements1
Number of Terminals3
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Power Dissipation Ambient-Max2 W
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor PolarityPNP
Transistor TypeGENERAL PURPOSE POWER

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