2SD1047E
Si NPN Power BJT

From Sanyo Semiconductor

@I(C) (A) (Test Condition)1.0
@V(CE) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)100
I(C) Abs.(A) Collector Current12
I(CBO) Max. (A)100u
MilitaryN
PackageTO-247
V(BR)CBO (V)160
V(BR)CEO (V)140
f(T) Min. (Hz) Transition Freq15M
h(FE) Max. Current gain.200
h(FE) Min. Static Current Gain100
t(f) Max. (s) Fall time.680n
t(on) Max. (s) Turn-On Time260n
t(s) Max. (s) Storage time.6.9u

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