BSS84LT3
130 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

From ON Semiconductor L.L.C.

StatusACTIVE
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min50 V
Drain Current-Max (ID)0.1300 A
Drain-source On Resistance-Max10 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionPLASTIC, CASE 318-08, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max0.2250 W
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

External links