FTD2019A
6000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From ON Semiconductor L.L.C.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationCOMMON DRAIN, 2 ELEMENTS
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)6 A
Drain-source On Resistance-Max0.0260 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package Description2155A, TSSOP-8
Number of Elements2
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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