MMUN2212LT1G TRANS PREBIAS NPN 246MW SOT23-3
From ON Semiconductor
| Category | Discrete Semiconductor Products |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Datasheets | MUN(2,5)212, MMUN2212L, DTC1234Exx, NSBC124EF3 |
| Family | Transistors (BJT) - Single, Pre-Biased |
| Frequency - Transition | - |
| Mounting Type | Surface Mount |
| Online Catalog | NPN Pre-biased Transistors |
| Other Names | MMUN2212LT1GOS MMUN2212LT1GOS-ND MMUN2212LT1GOSTR |
| PCN Assembly/Origin | Wafer Source Addition 26/Nov/2014 |
| PCN Design/Specification | Gold to Copper Wire 14/Oct/2008 Glue Mount Process 11/July/2008 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 246mW |
| Product Photos | SOT-23-3 |
| Resistor - Base (R1) (Ohms) | 22k |
| Resistor - Emitter Base (R2) (Ohms) | 22k |
| Series | - |
| Standard Package | 3,000 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
