MMUN2233LT1G
TRANS PREBIAS NPN 246MW SOT23-3

From ON Semiconductor

CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
DatasheetsMUN92,5)233, MMUN2233L, DTC143Zxx, NSBC143ZF3
FamilyTransistors (BJT) - Single, Pre-Biased
Frequency - Transition-
Mounting TypeSurface Mount
Online CatalogNPN Pre-biased Transistors
Other NamesMMUN2233LT1GOS MMUN2233LT1GOS-ND MMUN2233LT1GOSCT
PCN Assembly/OriginWafer Source Addition 26/Nov/2014
PCN Design/SpecificationGold to Copper Wire 14/Oct/2008 Glue Mount Process 11/July/2008
Package / CaseTO-236-3, SC-59, SOT-23-3
PackagingCut Tape (CT)
Power - Max246mW
Product PhotosSOT-23-3
Resistor - Base (R1) (Ohms)4.7k
Resistor - Emitter Base (R2) (Ohms)47k
Series-
Standard Package1
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max)50V

External links