MUN5311DW1T1G TRANS PREBIAS NPN/PNP SOT363
From ON Semiconductor
Category | Discrete Semiconductor Products |
Current - Collector (Ic) (Max) | 100mA |
Current - Collector Cutoff (Max) | 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Datasheets | MUN5311DW1, NSBC114EPXxx |
Family | Transistors (BJT) - Arrays, Pre-Biased |
Frequency - Transition | - |
Mounting Type | Surface Mount |
Online Catalog | NPN, PNP Pre-Biased Transistor Arrays |
Other Names | MUN5311DW1T1GOS MUN5311DW1T1GOS-ND MUN5311DW1T1GOSTR |
PCN Assembly/Origin | Wafer Source Addition 26/Nov/2014 |
PCN Design/Specification | Copper Wire 08/Jun/2009 |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Packaging | Tape & Reel (TR) |
Power - Max | 250mW |
Product Photos | SOT-363 PKG |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
Series | - |
Standard Package | 3,000 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |