{"Terminal Finish":"TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"18 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"22 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0510 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"88 A","Channel Type":"N-CHANNEL","China RoHS...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 1mA","Featured Product":"TO220 with Trench 6 MOSFETs","Package \/ Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"22A (Tc)","Gate Charge (Qg) @ Vgs":"11nC @ 10V","Product Photos":"TO-220-3, TO-220AB","Rds On (Max) @ Id, Vgs":"51 mOhm @ 10A, 10V","Datasheets":"PSMN050-80PS","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"50","Drain to Source Voltage (Vdss)":"80V","PCN Obsolescence\...

{"Polarity":"N","Packaging":"Rail\/Tube","Gate-Source Voltage (Max)":"20 V","Channel Mode":"Enhancement","Power Dissipation":"56 W","Continuous Drain Current":"22 A","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"80 V","Drain-Source On-Res":"0.051 ohm","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...