BSS138WT/R13
300 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From PANJIT SemiConductor

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min50 V
Drain Current-Max (ID)0.3000 A
Drain-source On Resistance-Max3 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)5 pF
Mfr Package DescriptionROHS COMPLIANT PACKAGE-3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max0.3500 W
Surface MountYes
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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