2SK1400
7 A, 300 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

From Renesas Electronics

StatusEOL/LIFEBUY
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min300 V
Drain Current-Max (ID)7 A
Drain-source On Resistance-Max0.7000 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionTO-220AB, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)28 A
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links