2SK2596 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
From Renesas Electronics
| Status | ACTIVE |
| Case Connection | SOURCE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 17 V |
| Drain Current-Max (ID) | 0.4000 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| Mfr Package Description | UPAK-3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Surface Mount | Yes |
| Terminal Form | FLAT |
| Terminal Position | SINGLE |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Type | RF POWER |
