2SK3209-E
25 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

From Renesas Electronics

StatusACTIVE
Case ConnectionISOLATED
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min150 V
Drain Current-Max (ID)25 A
Drain-source On Resistance-Max0.0630 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionSC-67, TO-220FM, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)100 A
Terminal FinishTIN COPPER
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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