2SK3572-S-AZ
80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA

From Renesas Electronics

StatusDISCONTINUED
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min20 V
Drain Current-Max (ID)80 A
Drain-source On Resistance-Max0.0099 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionMP-25 FIN CUT, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleIN-LINE
Power Dissipation Ambient-Max1.5 W
Pulsed Drain Current-Max (IDM)300 A
Terminal FinishNOT SPECIFIED
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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