BA1A4M-A 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
From Renesas Electronics
| Status | ACTIVE |
| Collector Current-Max (IC) | 0.1000 A |
| Collector-emitter Voltage-Max | 50 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| DC Current Gain-Min (hFE) | 80 |
| Lead Free | Yes |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Power Dissipation Ambient-Max | 0.2500 W |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Polarity | NPN |
| Transistor Type | GENERAL PURPOSE SMALL SIGNAL |
| Turn-off Time-Max (toff) | 6000 ns |
| Turn-on Time-Max (ton) | 200 ns |
