HAT1026R-EL-E
7 A, 30 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET

From Renesas Electronics

StatusACTIVE
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)7 A
Drain-source On Resistance-Max0.0650 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package Description3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Number of Elements1
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)56 A
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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