HAT3008R-EL-E
5 A, 60 V, 0.084 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET

From Renesas Electronics

StatusACTIVE
Channel TypeN-CHANNEL AND P-CHANNEL
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)5 A
Drain-source On Resistance-Max0.0840 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package Description3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Number of Elements2
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)40 A
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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