NE3210S01-T1B
KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET

From Renesas Electronics

StatusACTIVE
Case ConnectionSOURCE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min3 V
Drain Current-Max (ID)0.0150 A
FET TechnologyHETERO-JUNCTION
Highest Frequency BandKU BAND
Number of Elements1
Number of Terminals4
Operating ModeDEPLETION
Package Body MaterialPLASTIC/EPOXY
Package ShapeUNSPECIFIED
Package StyleMICROWAVE
Power Dissipation Ambient-Max0.1650 W
Power Gain-Min (Gp)12 dB
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionUNSPECIFIED
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor TypeRF SMALL SIGNAL

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