NE5520379A-T1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
From Renesas Electronics
| Status | DISCONTINUED |
| Case Connection | SOURCE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 15 V |
| Drain Current-Max (ID) | 1.5 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | L BAND |
| Mfr Package Description | 79A, 4 PIN |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | MICROWAVE |
| Power Dissipation Ambient-Max | 20 W |
| Surface Mount | Yes |
| Terminal Form | FLAT |
| Terminal Position | QUAD |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Type | RF POWER |
