NP40N055MHE-S18-AY
40 A, 55 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

From Renesas Electronics

StatusACTIVE
Avalanche Energy Rating (Eas)49 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min55 V
Drain Current-Max (ID)40 A
Drain-source On Resistance-Max0.0230 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionLEAD FREE, MP-25K, TO-220, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Power Dissipation Ambient-Max1.8 W
Pulsed Drain Current-Max (IDM)100 A
Terminal FinishMATTE TIN
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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