RJJ0315DPA-00-J53 35 A, 30 V, 0.01 ohm, P-CHANNEL, Si, POWER, MOSFET
From Renesas Electronics
Status | EOL/LIFEBUY |
Case Connection | DRAIN |
Channel Type | P-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 35 A |
Drain-source On Resistance-Max | 0.0100 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | HALOGEN FREE AND LEAD FREE, WPAK(2), 8 PIN |
Number of Elements | 1 |
Number of Terminals | 5 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Pulsed Drain Current-Max (IDM) | 140 A |
Surface Mount | Yes |
Terminal Finish | NICKEL PALLADIUM GOLD |
Terminal Form | NO LEAD |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |