RJJ0315DPA-00-J53
35 A, 30 V, 0.01 ohm, P-CHANNEL, Si, POWER, MOSFET

From Renesas Electronics

StatusEOL/LIFEBUY
Case ConnectionDRAIN
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)35 A
Drain-source On Resistance-Max0.0100 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionHALOGEN FREE AND LEAD FREE, WPAK(2), 8 PIN
Number of Elements1
Number of Terminals5
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)140 A
Surface MountYes
Terminal FinishNICKEL PALLADIUM GOLD
Terminal FormNO LEAD
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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