RJK2557DPA-00-J0
17 A, 250 V, 0.128 ohm, N-CHANNEL, Si, POWER, MOSFET

From Renesas Electronics

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min250 V
Drain Current-Max (ID)17 A
Drain-source On Resistance-Max0.1280 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionWPAK-8
Number of Elements1
Number of Terminals5
Operating ModeENHANCEMENT
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)34 A
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormNO LEAD
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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