UPD44165184BF5-E33Y-EQ3-A
1M X 18 QDR SRAM, 0.45 ns, PBGA165

From Renesas Electronics

StatusEOL/LIFEBUY
Access Time-Max (tACC)0.4500 ns
Memory Density1.89E7 deg
Memory IC TypeQDR SRAM
Memory Width18
Mfr Package Description13 X 15 MM, LEAD FREE, PLASTIC, BGA-165
Number of Functions1
Number of Terminals165
Number of Words1.05E6 words
Number of Words Code1M
Operating ModeSYNCHRONOUS
Operating Temperature-Max85 Cel
Operating Temperature-Min-40 Cel
Organization1M X 18
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Supply Voltage-Max (Vsup)1.9 V
Supply Voltage-Min (Vsup)1.7 V
Supply Voltage-Nom (Vsup)1.8 V
Surface MountYes
TechnologyCMOS
Temperature GradeINDUSTRIAL
Terminal FormBALL
Terminal Pitch1 mm
Terminal PositionBOTTOM

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