FS50ASJ-03F 50 A, 30 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET
From Renesas Electronics
Status | ACTIVE |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 50 A |
Drain-source On Resistance-Max | 0.0190 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | MP-3A, 3 PIN |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Pulsed Drain Current-Max (IDM) | 200 A |
Surface Mount | Yes |
Terminal Form | GULL WING |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |