BSM180D12P2C101 MOSFET 2N-CH 1200V 180A MODULE
From Rohm Semiconductor
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 180A |
| Datasheets | BSM180D12P2C101 BSM180D12P2C101 |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| FET Feature | Silicon Carbide (SiC) |
| FET Type | 2 N-Channel (Half Bridge) |
| Family | FETs - Modules |
| Featured Product | Full-SiC Half-Bridge Power Modules 1200 V Silicon Carbide (SiC) Diodes |
| Gate Charge (Qg) @ Vgs | - |
| Input Capacitance (Ciss) @ Vds | 23000pF @ 10V |
| Mounting Type | * |
| Online Catalog | BSM Series |
| Package / Case | Module |
| Packaging | Bulk |
| Power - Max | 1130W |
| Product Photos | BSM120D12P2C005 |
| Rds On (Max) @ Id, Vgs | - |
| Series | - |
| Standard Package | 12 |
| Supplier Device Package | Module |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
