RQ3E070BNTB MOSFET N-CH 30V 7A HSMT8
From Rohm Semiconductor
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
Datasheets | RQ3E070BN |
Drain to Source Voltage (Vdss) | 30V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | FETs - Single |
Gate Charge (Qg) @ Vgs | 8.9nC @ 10V |
Input Capacitance (Ciss) @ Vds | 410pF @ 15V |
Mounting Type | Surface Mount |
Online Catalog | N-Channel Logic Level Gate FETs |
Other Names | RQ3E070BNTBDKR |
Package / Case | 8-PowerVDFN |
Packaging | Digi-Reel® |
Power - Max | 2W |
Product Photos | 8-PowerVDFN PKG |
Rds On (Max) @ Id, Vgs | 27 mOhm @ 7A, 10V |
Series | - |
Standard Package | 1 |
Supplier Device Package | 8-HSMT (3.2x3) |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |