RQ3E100MNTB1 MOSFET N-CH 30V 10A HSMT8
From Rohm Semiconductor
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Datasheets | RQ3E100MN Datasheet |
| Drain to Source Voltage (Vdss) | 30V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 9.9nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 520pF @ 15V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | RQ3E100MNTB1DKR |
| Package / Case | 8-PowerVDFN |
| Packaging | Digi-Reel® |
| Power - Max | 2W |
| Product Photos | HSMT8 Series 8-PowerVDFN PKG |
| Rds On (Max) @ Id, Vgs | 12.3 mOhm @ 10A, 10V |
| Series | - |
| Standard Package | 1 |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
