SCS220AEC DIODE SILICON 650V 20A TO247
From Rohm Semiconductor
| Capacitance @ Vr, F | 730pF @ 1V, 1MHz |
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) | 20A |
| Current - Reverse Leakage @ Vr | 400µA @ 600V |
| Datasheets | Schottky Barrier Diode Part No. Explanation SCS220AE |
| Diode Type | Silicon Carbide Schottky |
| Family | Diodes, Rectifiers - Single |
| Featured Product | 1200 V Silicon Carbide (SiC) Diodes |
| Mounting Type | Through Hole |
| Online Catalog | SiC Schottky Barrier Diodes |
| Operating Temperature - Junction | 175°C (Max) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Product Photos | TO-247 |
| Product Training Modules | Silicon Carbide Diode |
| Reverse Recovery Time (trr) | - |
| Series | - |
| Speed | Fast Recovery = 200mA (Io) |
| Standard Package | 360 |
| Supplier Device Package | TO-247 |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Voltage - Forward (Vf) (Max) @ If | 1.55V @ 20A |
