SCT2450KEC MOSFET N-CH 1200V 10A TO-247
From Rohm Semiconductor
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Datasheets | SCT2450KE |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| FET Feature | Standard |
| FET Type | SiCFET N-Channel, Silicon Carbide |
| Family | FETs - Single |
| Featured Product | 2nd Generation High-Voltage SiC MOSFETs 1200 V Silicon Carbide (SiC) Diodes |
| Gate Charge (Qg) @ Vgs | 27nC @ 18V |
| Input Capacitance (Ciss) @ Vds | 463pF @ 800V |
| Mfg Application Notes | SiC Power Devices and Modules |
| Mounting Type | Through Hole |
| Online Catalog | Silicon Carbide (SiC) Standard FETs |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Power - Max | 85W |
| Product Photos | TO-247 |
| Rds On (Max) @ Id, Vgs | 585 mOhm @ 3A, 18V |
| Series | - |
| Standard Package | 360 |
| Supplier Device Package | TO-247 |
| Vgs(th) (Max) @ Id | 4V @ 900µA |
| Video File | ROHM Semiconductor SiC MOSFET Technology |
