BSM180D12P2C101 MOSFET 2N-CH 1200V 180A MODULE
From Rohm Semiconductor
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 180A |
Datasheets | BSM180D12P2C101 BSM180D12P2C101 |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
FET Feature | Silicon Carbide (SiC) |
FET Type | 2 N-Channel (Half Bridge) |
Family | FETs - Modules |
Featured Product | Full-SiC Half-Bridge Power Modules 1200 V Silicon Carbide (SiC) Diodes |
Gate Charge (Qg) @ Vgs | - |
Input Capacitance (Ciss) @ Vds | 23000pF @ 10V |
Mounting Type | * |
Online Catalog | BSM Series |
Package / Case | Module |
Packaging | Bulk |
Power - Max | 1130W |
Product Photos | BSM120D12P2C005 |
Rds On (Max) @ Id, Vgs | - |
Series | - |
Standard Package | 12 |
Supplier Device Package | Module |
Vgs(th) (Max) @ Id | 4V @ 35.2mA |