{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.6400 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","Configuration":"COMMON GATE, 4 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"70 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown...

{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.5000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"70 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"MET...

{"r(DS)on (Ohms)":"70","Features":"Norm-Open","Analog Sw. Cur. P-P Max.":"50m","@Vd (test) (V)":"0","t(on) Max. (s) Turn-On Time":"1.0n","Sw. Volt P-P Max.(V)":"10","P(D) Max.(W) Power Dissipation":"640m","Package":"DIP","Pins":"N\/A","Military":"N","Technology":"NMOS","@I(S) (test) (A)":"1.0m"}...