Mccsemi.com/SI2301
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.25 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"2...
1494 Bytes - 05:26:03, 30 April 2024
Mccsemi.com/SI2301A-TP
973 Bytes - 05:26:03, 30 April 2024
Mccsemi.com/SI2301-TP
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"450mV @ 250\u00b5A","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"2.8A (Ta)","Gate Charge (Qg) @ Vgs":"14.5nC @ 4.5V","Product Photos":"SOT-23-3","Product Training Modules":"Diode Handling and Mounting","Rds On (Max) @ Id, Vgs":"120 mOhm @ 2.8A, 4.5V","Datasheets":"SI2301","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)"...
1771 Bytes - 05:26:03, 30 April 2024
Mccsemi.com/SI2301-TP(TWN)
873 Bytes - 05:26:03, 30 April 2024
Mdd/SI2301
581 Bytes - 05:26:03, 30 April 2024
Mdd/SI2301-3A
723 Bytes - 05:26:03, 30 April 2024
Mdd/SI2301S-2.3A
738 Bytes - 05:26:03, 30 April 2024
Siliconix_vishay/SI2301BDS-T1-E3
{"Category":"Power MOSFET","Configuration":"Single","Mounting Type":"Surface Mount","Channel Mode":"Enhancement","Length":"3.04 mm","Channel Type":"P","Typical TurnOff Delay Time":"30 ns","Maximum Drain Source Resistance":"0.15 \u03a9","Package Type":"TO-236","Number of Elements per Chip":"1","Minimum Operating Temperature":"-55 \u00b0C","Forward Diode Voltage":"-1.2 V","Height":"1.02 mm","Maximum Operating Temperature":"+150 \u00b0C","Pin Count":"3"}...
1529 Bytes - 05:26:03, 30 April 2024
Siliconix_vishay/SI2301CDS-T1-E3
834 Bytes - 05:26:03, 30 April 2024
Siliconix_vishay/SI2301CDS-T1-GE3
842 Bytes - 05:26:03, 30 April 2024
Vishay.com/SI2301BDS
{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-236, 3 PIN","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"2.2 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration...
1375 Bytes - 05:26:03, 30 April 2024
Vishay.com/SI2301BDS-E3
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...
1470 Bytes - 05:26:03, 30 April 2024
Vishay.com/SI2301BDS-T1
739 Bytes - 05:26:03, 30 April 2024
Vishay.com/SI2301BDS-T1-BE3
708 Bytes - 05:26:03, 30 April 2024
Vishay.com/SI2301BDS-T1-E3
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Online Catalog":"P-Channel Logic Level Gate FETs","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"950mV @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"375pF @ 6V","Series":"TrenchFET\u00ae","Standard Package":"1","Supplier Device Package":"SOT-23-3 (TO-236)","Datasheets":"SI2301BDS","Rds On (Max) @ Id, Vgs":"100 mOhm @ 2.8A, 4.5V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae...
1790 Bytes - 05:26:03, 30 April 2024
Vishay.com/SI2301BDS-T1-GE3
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"950mV @ 250\u00b5A","Series":"TrenchFET\u00ae","Standard Package":"3,000","Supplier Device Package":"SOT-23-3 (TO-236)","Datasheets":"SI2301BDS","Rds On (Max) @ Id, Vgs":"100 mOhm @ 2.8A, 4.5V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"700mW","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Mounting Type":"Surfa...
1613 Bytes - 05:26:03, 30 April 2024
Vishay.com/SI2301CDS-T1-BE3
708 Bytes - 05:26:03, 30 April 2024
Vishay.com/SI2301CDS-T1-E3
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"P-Channel Standard FETs","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"405pF @ 10V","Series":"TrenchFET\u00ae","Standard Package":"3,000","Supplier Device Package":"SOT-23-3 (TO-236)","Datasheets":"SI2301CDS","Rds On (Max) @ Id, Vgs":"112 mOhm @ 2.8A, 4.5V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Ma...
1807 Bytes - 05:26:03, 30 April 2024
Vishay.com/SI2301CDS-T1-GE3
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"P-Channel Standard FETs","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"405pF @ 10V","Series":"TrenchFET\u00ae","Standard Package":"3,000","Supplier Device Package":"SOT-23-3 (TO-236)","Datasheets":"SI2301CDS","Rds On (Max) @ Id, Vgs":"112 mOhm @ 2.8A, 4.5V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Ma...
1798 Bytes - 05:26:03, 30 April 2024