{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"GREEN, PLASTIC PACKAGE-3","Pulsed Drain Current-Max (IDM)":"150 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"2150 mJ","Transistor Application":"SWITCHING","Drain-source On Resistance-Max":"0.0850 ohm","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3.9V @ 3.3mA","Series":"CoolMOS\u2122 C3","Package \/ Case":"*","Supplier Device Package":"*","Datasheets":"SPW55N80C3","Rds On (Max) @ Id, Vgs":"85 mOhm @ 32.6A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"*","Power - Max":"500W","Standard Package":"240","Input Capacitance (Ciss) @ Vds":"7520pF @ 100V","Drain to Source Voltage (Vdss)":"800V","Current - C...

{"Category":"MOSFET","Maximum Drain Source Voltage":"850 V","Typical Rise Time":"21 ns","Typical Turn-Off Delay Time":"200 ns","Description":"Value","Maximum Continuous Drain Current":"54.9 A","Package":"3TO-247","Mounting":"Through Hole","Maximum Gate Source Voltage":"20 V","Typical Turn-On Delay Time":"45 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"85@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"9 ns"}...