Toshiba.co.jp/SSM6N15AFE
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ES6, 2-2N1D, 6 PIN","Terminal Form":"FLAT","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.1000 A","Transistor Application":"SWITCHING","Number of Elements":"2","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Co...
1463 Bytes - 10:54:36, 02 May 2024
Toshiba.co.jp/SSM6N15AFE,LM
{"Factory Pack Quantity":"4000","Vds - Drain-Source Breakdown Voltage":"30 V","Transistor Polarity":"N-Channel","Brand":"Toshiba","Id - Continuous Drain Current":"100 mA","Mounting Style":"SMD\/SMT","Pd - Power Dissipation":"150 mW","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"3.6 Ohms","Package \/ Case":"SOT-23-6","RoHS":"Details","Manufacturer":"Toshiba"}...
1413 Bytes - 10:54:36, 02 May 2024
Toshiba.co.jp/SSM6N15AFE,LM(T
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.15(W)","Continuous Drain Current":"0.1(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"ES","Operating Temp Range":"-55C to 150C","Type":"Small Signal","Pin Count":"6","Number of Elements":"2"}...
1502 Bytes - 10:54:36, 02 May 2024
Toshiba.semicon-storage.com/SSM6N15AFE,LM
1012 Bytes - 10:54:36, 02 May 2024