K4B2G0446C-HCH90
512M X 4 DDR DRAM, 0.25 ns, PBGA78

From Samsung Semiconductor Division

StatusACTIVE
Access ModeMULTI BANK PAGE BURST
Access Time-Max (tRAC)0.2500 ns
EU RoHS CompliantYes
Lead FreeYes
Memory Density2.15E9 deg
Memory IC TypeDDR DRAM
Memory Width4
Mfr Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, FBGA-78
Number of Functions1
Number of Ports1
Number of Terminals78
Number of Words5.37E8 words
Number of Words Code512M
Operating ModeSYNCHRONOUS
Operating Temperature-Max85 Cel
Operating Temperature-Min0.0 Cel
Organization512M X 4
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH
Supply Voltage-Max (Vsup)1.58 V
Supply Voltage-Min (Vsup)1.42 V
Supply Voltage-Nom (Vsup)1.5 V
Surface MountYes
Temperature GradeOTHER
Terminal FinishTIN SILVER COPPER
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

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