K4E170111C-BC50
16M X 1 EDO DRAM, 50 ns, PDSO24

From Samsung Semiconductor Division

StatusACTIVE
Access ModeFAST PAGE WITH EDO
Access Time-Max (tRAC)50 ns
Memory Density1.68E7 deg
Memory IC TypeEDO DRAM
Memory Width1
Mfr Package Description0.300 INCH, PLASTIC, SOJ-26/24
Number of Functions1
Number of Ports1
Number of Terminals24
Number of Words1.68E7 words
Number of Words Code16M
Operating ModeASYNCHRONOUS
Operating Temperature-Max70 Cel
Operating Temperature-Min0.0 Cel
Organization16M X 1
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Supply Voltage-Max (Vsup)5.5 V
Supply Voltage-Min (Vsup)4.5 V
Supply Voltage-Nom (Vsup)5 V
Surface MountYes
TechnologyCMOS
Temperature GradeCOMMERCIAL
Terminal FinishTIN LEAD
Terminal FormJ BEND
Terminal Pitch1.27 mm
Terminal PositionDUAL

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