K4H510438J-LIB00
128M X 4 DDR DRAM, 0.75 ns, PDSO66

From Samsung Semiconductor Division

StatusEOL/LIFEBUY
Access ModeFOUR BANK PAGE BURST
Access Time-Max (tRAC)0.7500 ns
EU RoHS CompliantYes
Lead FreeYes
Memory Density5.37E8 deg
Memory IC TypeDDR DRAM
Memory Width4
Mfr Package Description0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66
Number of Functions1
Number of Ports1
Number of Terminals66
Number of Words1.34E8 words
Number of Words Code128M
Operating ModeSYNCHRONOUS
Operating Temperature-Max85 Cel
Operating Temperature-Min-40 Cel
Organization128M X 4
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE, THIN PROFILE
Supply Voltage-Max (Vsup)2.7 V
Supply Voltage-Min (Vsup)2.3 V
Supply Voltage-Nom (Vsup)2.5 V
Surface MountYes
TechnologyCMOS
Temperature GradeINDUSTRIAL
Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Terminal Pitch0.6500 mm
Terminal PositionDUAL

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