K4H560838E-TCB00 32M X 8 DDR DRAM, 0.75 ns, PDSO66
From Samsung Semiconductor Division
| Status | ACTIVE |
| Access Mode | FOUR BANK PAGE BURST |
| Access Time-Max (tRAC) | 0.7500 ns |
| Memory Density | 2.68E8 deg |
| Memory IC Type | DDR DRAM |
| Memory Width | 8 |
| Mfr Package Description | 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 66 |
| Number of Words | 3.36E7 words |
| Number of Words Code | 32M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 70 Cel |
| Operating Temperature-Min | 0.0 Cel |
| Organization | 32M X 8 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE |
| Supply Voltage-Max (Vsup) | 2.7 V |
| Supply Voltage-Min (Vsup) | 2.3 V |
| Supply Voltage-Nom (Vsup) | 2.5 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | TIN LEAD |
| Terminal Form | GULL WING |
| Terminal Pitch | 0.6500 mm |
| Terminal Position | DUAL |
