K9F1208U0B-JIB0T 64M X 8 FLASH 3.3V PROM, 30 ns, PBGA63
From Samsung Semiconductor Division
Status | ACTIVE |
Access Time-Max (tACC) | 30 ns |
EU RoHS Compliant | Yes |
Lead Free | Yes |
Memory Density | 5.13E8 deg |
Memory IC Type | FLASH 3.3V PROM |
Memory Width | 8 |
Mfr Package Description | 8.50 X 13 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63 |
Number of Functions | 1 |
Number of Terminals | 63 |
Number of Words | 6.41E7 words |
Number of Words Code | 64M |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Min | -40 Cel |
Organization | 64M X 8 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
Parallel/Serial | PARALLEL |
Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 2.7 V |
Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount | Yes |
Technology | CMOS |
Temperature Grade | INDUSTRIAL |
Terminal Finish | TIN SILVER COPPER |
Terminal Form | BALL |
Terminal Pitch | 0.8000 mm |
Terminal Position | BOTTOM |