IRFM110 N-Channel Enhancement MOSFET
From Samsung Electronics
| @(VDS) (V) (Test Condition) | 20 |
| @Freq. (Hz) (Test Condition) | 1.0M |
| @I(D) (A) (Test Condition) | 900m |
| @Temp (°C) (Test Condition) | 25 |
| @V(DS) (V) (Test Condition) | 25 |
| @V(GS) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 3.1 |
| C(iss) Max. (F) | 180p |
| I(D) Abs. Drain Current (A) | 1.5 |
| I(D) Abs. Max.(A) Drain Curr. | 960m |
| I(DM) Max (A)(@25°C) | 12 |
| I(DSS) Max. (A) | 250u |
| I(GSS) Max. (A) | 100n |
| Military | N |
| Package | SOT-223 |
| Thermal Resistance Junc-Amb. | 60 |
| V(BR)DSS (V) | 100 |
| V(BR)GSS (V) | 20 |
| V(GS)th Max. (V) | 4.0 |
| V(GS)th Min. (V) | 2.0 |
| g(fs) Min. (S) Trans. conduct. | 1.1 |
| r(DS)on Max. (Ohms) | 540m |
| t(d)off Max. (s) Off time | 15n |
| t(f) Max. (s) Fall time. | 9.4n |
| t(r) Max. (s) Rise time | 16n |
| td(on) Max (s) On time delay | 6.9n |
